| PART |
Description |
Maker |
| FGA50N100BNTDTU |
1000V, 50A NPT-Trench IGBT CO-PAK; Package: TO-3P; No of Pins: 3; Container: Rail 50 A, 1000 V, N-CHANNEL IGBT
|
Fairchild Semiconductor, Corp.
|
| HGT1S20N35G3VL HGTP20N35G3VL HGT1S20N35G3VLS HGT1S |
20A/ 350V N-Channel/ Logic Level/ Voltage Clamping IGBTs
20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs
TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB
XC9536-6PC44C - NOT RECOMMENDED for NEW DESIGN
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| STGP10NB37LZ |
N-CHANNEL CLAMPED 20A TO-220 INTERNALLY CLAMPED POWERMESH IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh IGBT
N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh⑩ IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB20PF75 STB20PF75T4 |
P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II POWER MOSFET
P-CHANNEL 75V - 0.10 ?- 20A D2PAK STripFET II POWER MOSFET
P-CHANNEL 75V - 0.10 з - 20A D?PAK STripFETII POWER MOSFET P通道75V 0.10з - 20A?巴基斯STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| TS20P06G TS20P01G-16 |
20A, 50V - 1000V Glass Passivated Bridge Rectifiers
|
Taiwan Semiconductor Co...
|
| OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET
1000V Single N-Channel Hi-Rel MOSFET in a D3 package
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| IXGP12N100A IXGA12N100 IXGA12N100A IXGP12N100 |
1000V IGBT
|
IXYS[IXYS Corporation]
|
